Toshiba Corporation today announced important breakthroughs in key technologies for magnetoresistive random access memory (MRAM), a promising, next-generation semiconductor memory device. The company has successfully fabricated a MRAM memory cell integrating the new technologies and verified its stable performance. Full details of the new technologies were presented today at the 52nd Magnetism and Magnetic Materials Conference in Tampa, Florida, USA which is being held from November 5th to 9th.

MRAM is a highly anticipated next-generation non-volatile semiconductor memory device that offers fast random write/access speeds, enhances endurance in operation with very low power consumption. MRAM can theoretically achieve high level integration as the memory cell structure is relatively simple.

In making these major advances, Toshiba applied and proved the spin transfer switching and perpendicular magnetic anisotropy (PMA) technologies in a magnetic tunnel junction, which is a key component in the memory cell.

Article taken from WebWire