ATMI and IBM to collaborate on next-generation semiconductors
ATMI has entered into an agreement with IBM to jointly develop and demonstrate advanced chemical formulations for highly implanted photoresist strip applications that will allow the design and production of next-generation semiconductor devices. Under the agreement, ATMI will add its semiconductor materials and process experience to IBM’s integrated circuit design and manufacturing knowledge. Together, ATMI and IBM will work to integrate new materials and thin film processes to more quickly and effectively address the challenges faced in advanced integrated circuit production.
“New materials are driving integrated circuit performance,” said Tod Higinbotham, Executive Vice President, Process Solutions for ATMI. “Our collaboration with IBM will benefit both companies as we seek to create and commercialize next-generation materials and leading-edge semiconductor processes for ever-more-powerful devices. We are addressing specific materials issues that are plaguing the semiconductor industry worldwide today-and those that will become obstacles in the future.”
“IBM believes that process and material improvements will make a significant contribution to the future of the semiconductor industry,” said Dr. Ronald D. Goldblatt, Distinguished Engineer and Senior Manager, IBM Research. “Our joint development work combines our strengths in developing successful materials solutions for leading edge device applications.”
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