Intel, Micron boost flash memory speed by five times
Intel Corporation and Micron Technology Inc have unveiled a high speed NAND flash memory technology that can greatly enhance the access and transfer of data in devices that use silicon for storage.
The new technology, developed jointly by Intel and Micron and manufactured by the companies’ NAND flash joint venture, IM Flash Technologies is five times faster than conventional NAND, allowing data to be transferred in a fraction of the time for computing, video, photography and other consumer applications.The new high speed NAND can reach speeds up to 200 megabytes per second (MB/s) for reading data and 100 MB/s for writing data, achieved by leveraging the new ONFI 2.0 specification and a four-plane architecture with higher clock speeds. In comparison, conventional single level cell NAND is limited to 40 MB/s for reading data and less than 20 MB/s for writing data.
“Micron looks forward to unlocking the possibilities with high speed NAND,” said Frankie Roohparvar, Micron vice president of NAND development. “We are working with an ecosystem of key enablers and partners to build and optimize corresponding system technologies that take advantage of its improved performance capabilities. Micron is committed to NAND innovation and designing new features into the technology that create a powerful data storage solution for today’s most popular consumer electronic and computing devices.”
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