SanDisk announces two new memory technologies
SanDisk has announced the introduction of two new memory technologies.
The first, a three-bit-per-cell (x3) NAND flash memory is expected to go into mass production in March/April 2008.
The 16-gigabit (Gb) x3 NAND flash employs SanDisk’s standard 56 nanometer (nm) flash technology and provides over 20 per cent more die per wafer compared to standard NAND Multi-Level Cell (MLC) memory (2-bits-per-cell) on the same technology node. x3 enables higher manufacturing efficiency and lower die cost for the same capital investment. The new x3 flash architecture has been in development for the past two years and employs SanDisk’s most advanced patented design innovations to achieve the same performance and high reliability found in SanDisk’s 2-bits-per-cell chips.
The 3-bits-per-cell technology was co-developed with Toshiba which shares with SanDisk the development and manufacturing of advanced flash memories.
Read more about the 16Gb chip at SanDisk
In addition, SanDisk has announced the introduction of a MLC NAND flash memory using 43nm process technology which was co-developed Toshiba in Japan.
This 43nm technology advancement is said to provide twice the density per chip compared to 56nm 16Gigabit (Gb) process technology, and so lowers the die-cost while maintaining performance and reliability.
During the second quarter of 2008, SanDisk intends to begin shipping products using the industry’s highest available density of single-chip MLC NAND flash memory. Shipments will start with 16Gigabit and will be followed by 32Gigabit in the second half of 2008.
Read more about the 43 NAND at SanDisk
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