Paper-based transistor
Researchers from the Universidade Nova de Lisboa, have developed a Field Effect Transistor (FET) with a paper interstrate layer.
In a new approach, a common sheet of paper was used as the dielectric layer or oxide FETs. The researchers fabricated the devices on both sides of the paper sheet. This makes it act simultaneously as the electric insulator and as the substrate.
Electric characterisation of devices showed that the hybrid FETs performance outpace those of amorphous silicon TFTs, and rival the oxide thin film transistors (TFTs) produced on glass or crystalline silicon substrates. The results suggest promising new disposable electronics such as paper display, smart labels, RFID tags and bio-applications.
Read more on: Design, Electronics, FET, Silicon, TFTs, transistor
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