Researchers from the Universidade Nova de Lisboa, have developed a Field Effect Transistor (FET) with a paper interstrate layer.

In a new approach, a common sheet of paper was used as the dielectric layer or oxide FETs. The researchers fabricated the devices on both sides of the paper sheet. This makes it act simultaneously as the electric insulator and as the substrate.

Electric characterisation of devices showed that the hybrid FETs performance outpace those of amorphous silicon TFTs, and rival the oxide thin film transistors (TFTs) produced on glass or crystalline silicon substrates. The results suggest promising new disposable electronics such as paper display, smart labels, RFID tags and bio-applications.

The Chair of Display Technology at Universitaet Stuttgart has worked in collaboration with Nano Proprietary’s subsidiary, applied Nanotech Inc (ANI), to increase the fabrication yield of carbon nanotube (CNT) thin film transistors (TFTs) for use in displays, electronic circuits, sensors, memory chips and other applications that are transitioning from rigid substrates, such as silicon and glass, to flexible substrates.

ANI and the Universitaet Stuttgart have worked together to increase the fabrication yield of carbon nanotube TFTs using ANI’s proprietary printing-like method of carbon nanotube deposition. The TFTs exceed an on/off ratio of five orders of magnitude and achieve the electron mobility necessary for thei utilisation for low temperature plastic-based substrates.

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